Diffusion and solubility of electrically active iron atoms in gallium arsenide

• DOI: 10.1007/s11182-009-9153-3
• Publication Date: 2009-04-14T23:23:19Z
• Authors: I. A. Prudaev; S. S. Khludkov
• Keywords: 0103 physical sciences; 01 natural sciences

Iron diffusion in GaAs at arsenic pressure 1 atm is studied. The temperature dependences of the diffusion coefficient and solubility of electrically active iron atoms in GaAs are determined. The dependences can be described by the Arrhenius equations with the following parameters: D 0 = 1.61 cm2/s and E = (2.16 ± 0.47) eV (for diffusion) and N S 0 = 4.62 ⋅ 1023 cm−3 and E S = (1.61 ± 0.16) eV (for solubility). The results obtained are compared with the earlier published data. The concentration of electrically active iron atoms is shown to be about 2 times lower than the total iron concentration in GaAs.