Temperature Dependence of the Quantum Efficiency of Structures with Multiple Quantum Wells InGaN / GaN Under Photo- and Electroluminescence

• DOI: 10.1007/s11182-013-0096-3
• Publication Date: 2013-11-05T23:31:15Z
• Authors: I. A. Prudaev; I. S. Romanov; V. V. Kop’ev; S. B. Shirapov; О. P. Тоlbanov; S. S. Khludkov
• Keywords: 0202 electrical engineering, electronic engineering, information engineering; 02 engineering and technology; 7. Clean energy

In the present work, the external quantum efficiency of the blue LED- structures based on InGaN/GaN is studied as a function of the current density (or intensity of optical excitation) under electroluminescence (or photoluminescence) at different temperatures.