Aluminum Nitride Doped with Transition Metal Group Atoms as a Material for Spintronics

• DOI: 10.1007/s11182-021-02264-y
• Publication Date: 2021-03-18T19:12:30Z
• Authors: S. S. Khludkov; I. A. Prudaev; L. O. Root; O. P. Tolbanov; I. V. Ivonin
• Keywords: 02 engineering and technology; 0210 nano-technology

Aluminum nitride doped with transition metal group atoms as a material for spintronics The overview of scientific literature on electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on literature sources published mainly in the last 10 years. The doping was carried out by different methods: during the material growth (molecular beam epitaxy, magnetron sputtering, discharge techniques) or by implantation into the material. The presented theoretical and experimental data show that AlN doped with transition metal group atoms has ferromagnetic properties at temperatures above room temperature and it is a promising material for spintronics.