Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by sol-gel method

• DOI: 10.1007/s11431-007-0011-7
• Publication Date: 2007-02-16T04:27:16Z
• Authors: DongYun Guo; MeiYa Li; Ling Pei; BenFang Yu; GengZhu Wu; XingZhong Zhao; YunBo Wang; Jun Yu
• Keywords: Dissipation factor

The Bi3.25La0.75Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates using sol-gel method. The structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The thin films showed a perovskite phase and dense microstructure. The 2Pr and 2Vc of the Bi3.25La0.75Ti3O12 thin films annealed at 700°C were 18.6 μC/cm2 and 4.1 V, respectively, under an applied voltage 10 V. After the switching of 1 × 1010 cycles, the Pr value decreased to 90% of its pre-fatigue values. The films showed good insulating behavior according to the test of leakage current. The dielectric constant and the dissipation factor of the Bi3.25La0.75Ti3O12 thin films were about 176 and 0.046 at 1 kHz, respectively.