Theoretical analysis and simulation of InP-based uni-traveling-carrier photodetector

• DOI: 10.1007/s11434-009-0394-x
• Publication Date: 2009-11-09T08:09:42Z
• Authors: Sheng Xie; LiSa Liu; WenPing Kang; RuiLiang Song; LuHong Mao; ShiLin Zhang
• Keywords: Photocurrent; Biasing; Optical power

In this paper the photocurrent response of InP-based uni-traveling-carrier photodetectors (UTC-PDs) is analyzed using the drift-diffusion approach. Based on the theoretical analysis, an InP/InGaAs UTC-PD is modeled utilizing a numerical device simulator (ATLAS), and the physics of the device’s operation and its performance as a function of biasing and power level are simulated. The simulation results indicate that the linear dynamic range is up to 60 mW, the f−3 dB is about 40 GHz and the full-width at half-maximum (FWHM) of the current pulse is 28 ps with 10 mW optical power injection for an optimized structure UTC-PD.