Approaches for improving the performance of filament-type resistive switching memory

• DOI: 10.1007/s11434-010-4255-4
• Publication Date: 2011-03-02T05:25:27Z
• Authors: WenTai Lian; ShiBing Long; HangBing Lü; Qi Liu; YingTao Li; Sen Zhang; Yan Wang; ZongLiang Huo; YueHua Dai; JunNing Chen; Ming Liu
• Keywords: 0103 physical sciences; General; 01 natural sciences

Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling, high density, high speed and low power. However, its endurance, retention and uniformity are still imperfect. In this article, the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance, including doping, process optimization and interface engineering, are introduced.