Farfield Under Small Scattering Angle in the Rectangular Ag–Si–SiO2 Cavity

• DOI: 10.1007/s11468-019-00928-7
• Publication Date: 2019-03-12T16:52:39Z
• Authors: Shu Li; Yang Zou; Huang-qing Liu; Shu-gui Chong; Yan-ping Xiao; Li-qun Wen
• Keywords: 0103 physical sciences; 02 engineering and technology; 0210 nano-technology; 01 natural sciences

In this paper, the farfield under small scattering angle was investigated in the rectangular Ag–Si–SiO2 cavity by FDTD. The simulation results showed that Re(E) of the farfield was related to the monitoring wavelength and was a function of monitoring wavelengths. Moreover, in the rectangular Ag–Si–SiO2 cavity, the amplitude of Re(E) changed as the silicon height d varied, and maximum amplitude A of Re(E) could be approximated as the functions of transverse length l and thickness t of silver film under small scattering angle. Re(E) was independent of the transverse length w2 and the longitudinal length d of the cavity in RCM and was also irrelevant with the dielectric constant of silver films. The amplitude A of Re(E) increased as l and t of silver film increased.