Fabrication and Characterization of Pb(Zr0.53,Ti0.47)O3-Pb(Nb1/3,Zn2/3)O3 Thin Films on Cantilever Stacks

• DOI: 10.1007/s11664-010-1407-x
• Publication Date: 2010-11-17T17:06:13Z
• Authors: E. Fuentes-Fernandez; W. Debray-Mechtaly; M. A. Quevedo-Lopez; B. Gnade; A. Rajasekaran; A. Hande; P. Shah; H. N. Alshareef
• Keywords: PZT-PZN; 0103 physical sciences; integration; 02 engineering and technology; relaxor; cantilever; Piezoelectric material; 0210 nano-technology; 01 natural sciences; perovskite

0.9Pb(Zr0.53,Ti0.47)O3-0.1Pb(Zn1/3,Nb2/3)O3 (PZT–PZN) thin films and integrated cantilevers have been fabricated. The PZT–PZN films were deposited on SiO2/Si or SiO2/Si3N4/SiO2/poly-Si/Si membranes capped with a sol–gel-derived ZrO2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT–PZN films on the ZrO2 surface. By controlling these parameters, the electrical properties of the PZT–PZN films, their microstructure, and phase purity were significantly improved. PZT–PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure.