Growth and Comparison of Residual Stress of AlN Films on Silicon (100), (110) and (111) Substrates

• DOI: 10.1007/s11664-017-5924-8
• Publication Date: 2017-11-21T11:42:17Z
• Authors: Akhilesh Pandey; Shankar Dutta; Ravi Prakash; R. Raman; Ashok Kumar Kapoor; Davinder Kaur
• Keywords: 0103 physical sciences; 01 natural sciences

This paper reports on the comparison of residual stresses in AlN thin films sputter-deposited in identical conditions on Si (100) (110) and (111) substrates. The deposited films are of polycrystalline wurtzite structure with preferred orientation along the (002) direction. AlN film on the Si (111) substrate showed a vertical columnar structure, whereas films on Si (100) and (110) showed tilted columnar structures. Residual stress in the AlN films is estimated by x-ray diffraction (XRD), infra-red absorption method and wafer curvature technique. Films residual stress are found compressive and values are in the range of − 650 (± 50) MPa, − 730 (± 50) MPa and − 300 (± 50) MPa for the AlN films grown on Si (100), (110) and (111) substrates, respectively, with different techniques. The difference in residual stresses can be attributed to the microstructure of the films and mismatch between in plane atomic arrangements of the film and substrates.