Impact of Rotation Rate on Bismuth Saturation in GaAsBi Grown by Molecular Beam Epitaxy

• DOI: 10.1007/s11664-019-06949-6
• Publication Date: 2019-01-31T14:59:04Z
• Authors: Margaret A. Stevens; Kevin A. Grossklaus; John H. McElearney; Thomas E. Vanderv...
• Keywords: Bismuth; Saturation (graph theory); Solid-state physics

GaAs1−xBix has been grown by solid-source molecular beam epitaxy using varying substrate rotation rates. Changes in local bismuth saturation were studied the Bi/Ga pressure ratio across wafer. Films on both GaAs and InGaAs buffer layers with indium content to change strain conditions of bismide layer out-of-plane growth rate. All samples demonstrated vertical composition modulations a period ∼ 4 nm that tracked rate per cycle. The thermal stability these was shown behave similarly bulk GaAsBi. Bismide are attributed low temperature sample rather than V/III ratio.