Negative Differential Resistance (NDR) Behavior of Nickel Oxide (NiO) Based Metal-Insulator-Semiconductor Structures

• DOI: 10.1007/s11664-019-07781-8
• Publication Date: 2019-11-18T21:01:25Z
• Authors: Kamruzzaman Khan; Srikanth Itapu; Daniel G. Georgiev
• Keywords: Non-blocking I/O; Solid-state physics; Nickel oxide

This work presents a metal-insulator-semiconductor (MIS) structure based on nickel oxide (NiO) showing negative differential resistance (NDR) properties. The $${\hbox{Ni}}/{\hbox{NiO}}/{\hbox{HfO}}_2/{\hbox{Ni}}$$ layers structure was obtained by multiple sputtering steps and was then characterized by electrical measurements and other relevant methods. The electrical characteristics of the MIS structure were studied as a function of the oxide layer thickness. The observed NDR behavior could be attributed to a combination of the band-bending and a tunneling current contribution.