The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process

• DOI: 10.1007/s11671-010-9690-2
• Publication Date: 2010-07-17T10:52:21Z
• Authors: Moongyu Jang; Youngsam Park; Myungsim Jun; Younghoon Hyun; Sung-Jin Choi; Taehyoung Zyung
• Keywords: Nanochemistry; Silicon nanowires

Silicon nanowires are patterned down to 30 nm using complementary metal-oxide-semiconductor (CMOS) compatible process. The electrical conductivities of n-/p-leg extracted with the variation width. Using this structure, Seebeck coefficients measured. obtained maximum coefficient values 122 μV/K for p-leg and -94 n-leg. attainable power factor is 0.74 mW/m K(2) at room temperature.