High resolution strain mapping of a single axially heterostructured nanowire using scanning X-ray diffraction

• DOI: 10.1007/s12274-020-2878-6
• Publication Date: 2020-06-22T03:33:42Z
• Authors: Susanna Hammarberg; Vilgailė Dagytė; Lert Chayanun; Megan O. Hill; Alexander Wyke; Alexander Björling; Ulf Johansson; Sebastian Kalbfle...; Magnus Heurlin; Lincoln J. Lauhon; Magnus T. Borgström; Jesper Wallentin
• Keywords: Axial symmetry; Lattice constant; Strain (injury); Lattice (music)

Abstract Axially heterostructured nanowires are a promising platform for next generation electronic and optoelectronic devices. Reports based on theoretical modeling have predicted more complex strain distributions increased critical layer thicknesses than in thin films, due to lateral relaxation at the surface, but understanding of growth these structures is hampered by lack high-resolution characterization techniques. Here, we demonstrate mapping an axially segmented GaInP-InP 190 nm diameter nanowire heterostructure using scanning X-ray diffraction. We systematically investigate distribution lattice tilt three different segment lengths from 45 170 nm, obtaining maps with about 10 −4 relative sensitivity. The experiments were performed 90 nanofocus NanoMAX beamline, taking advantage high coherent flux first diffraction limited storage ring MAX IV. experimental results good agreement full simulation experiment three-dimensional (3D) finite element model. largest segments show profile, where surface leads dome-shaped mismatched interfaces, change tensile compressive within single segment. cross-shaped profile excellent qualitative quantitative simulations. In contrast, shortest measured InP almost fully adapted surrounding GaInP segments.