Effects of SiO2 and TiO2 on resistance stabilities of flexible indium-tin-oxide films prepared by ion assisted deposition

• DOI: 10.1007/s12598-009-0108-1
• Publication Date: 2009-12-09T05:42:35Z
• Authors: Yuqiong Li; Zhinong Yu; Wuyu Wang; Yuejiang Fan; Zhao Ding; Wei Xue
• Keywords: 02 engineering and technology; 0210 nano-technology

Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide (ITO) films were prepared on polyethylene terephthalate (PET) substrates by ion assisted deposition (IAD) at room temperature, and the effects of SiO2 and TiO2 on the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. ITO films with SiO2 buffer layer have better resistance stabilities compared to ones with TiO2 buffer layer after the ITO films are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in (400), (440) directions.