Performance Analysis of Silicon Carrier Selective Contact Solar Cells With ALD MoOx as Hole Selective Layer

• DOI: 10.1007/s12633-021-00984-x
• Publication Date: 2021-02-04T23:03:29Z
• Authors: Astha Tyagi; Jayeeta Biswas; Kunal Ghosh; Anil Kottantharayil; Saurabh Lodha
• Keywords: Equivalent series resistance; Passivation; Contact resistance

Carrier selective contact (CSC) architecture is one of several promising candidates for high-efficiency silicon solar cells operating close to the thermodynamic limit. However, an industrially feasible process is lacking for manufacturable CSC cells. Specifically, although evaporated molybdenum oxide (MoOx) has been actively researched as a hole selective layer, a more industry-compatible deposition process is critically needed. Atomic layer deposition (ALD) has been widely employed in the industry for material stacks requiring precise thickness control and uniformity. In this paper, we present a performance analysis of CSC solar cells fabricated using ALD MoOx as the hole selective layer. As a first step, the standard ALD recipe was modified to obtain sub-stoichiometric MoOx with a higher work function due to increased oxygen vacancy concentration. The modified MoOx recipe resulted in low open-circuit voltage values in fabricated not-passivated CSC solar cells. A 4 nm thick amorphous silicon layer inserted in the hole selective stack showed significant improvement in minority lifetime but worse solar cell performance due to increased series resistance. Besides indicating a strong trade-off between passivation and series resistance, the solar cell data highlights series resistance as a key performance limiter in CSC solar cells.