The effects of geometrical shape and impurity position on the self-polarization of a donor impurity in an infinite GaAs/AlAs tetragonal quantum dot

• DOI: 10.1007/s12648-020-01813-4
• Publication Date: 2020-07-29T16:03:58Z
• Authors: O. Akankan; I. Erdogan; A. I. Mese; E. Cicek; H. Akbas
• Keywords: 0103 physical sciences; 02 engineering and technology; 0210 nano-technology; 01 natural sciences

Using the variational method within the effective-mass approximation, the effects of geometrical shape and impurity position on the ground-state self-polarization and binding energy of a donor impurity are theoretically studied for the infinite GaAs/AlAs tetragonal quantum dot. We have found that the ground-state self-polarization and binding energy depend on geometrical shape and impurity-AlAs layer distance.