Effects of Post-annealing and Co Interlayer Between SiNx and Cu on the Interfacial Adhesion Energy for Advanced Cu Interconnections

• DOI: 10.1007/s13391-020-00210-7
• Publication Date: 2020-04-07T21:12:40Z
• Authors: Hyeonchul Lee; Minsu Jeong; Gahui Kim; Kirak Son; Jeongmin Seo; Taek-Soo Kim; Young-Bae Park
• Keywords: 02 engineering and technology; 0210 nano-technology

Effects of Co interlayer and 200 °C post-annealing treatment on interfacial adhesion energy of SiNx/Cu structure were systematically investigated. Initial interfacial adhesion energy of SiNx/Cu structure measured by double cantilever beam test was 0.92 J/m2. The interfacial adhesion energy increased to 2.94 J/m2 with Co interlayer between SiNx and Cu films. After post-annealing treatment at 200 °C for 500 h, the interfacial adhesion energy of SiNx/Co/Cu structure decreased to 0.95 J/m2. X-ray photoelectron spectroscopy analysis revealed that the interfacial adhesion energy increased for SiNx/Co/Cu thin films due to CoSi2 reaction layer at SiNx/Co interface, but sharply decreased during post-annealing treatment by SiO2 formation at SiNx/Co interface.