Perspectives on interfacial thermal resistance of 2D materials: Raman characterization and underlying physics

• DOI: 10.1007/s44251-024-00037-6
• Publication Date: 2024-02-08T08:02:48Z
• Authors: Jing Liu; Ibrahim Al Keyyam; Yangsu Xie; Xinwei Wang
• Keywords: Interfacial thermal resistance; Characterization; Laser flash analysis

Abstract Interfacial thermal resistance plays a crucial role in efficient heat dissipation modern electronic devices. It is critical to understand the interfacial transport from both experiments and underlying physics. This review focused on transient opto-thermal Raman-based techniques for measuring between 2D materials substrate. idea eliminates use of laser absorption absolute temperature rise data, therefore provides some highest level measurement accuracy physics understanding. Physical concepts perspectives are given time-domain differential Raman (TD-Raman), frequency-resolved (FR-Raman), energy state-resolved (ET-Raman), frequency domain ET-Raman (FET-Raman), as well flash dual-wavelength techniques. The nonequilibrium optical acoustic phonons, hot carrier diffusion must be considered extremely small characterization resistance. To have better understanding phonon across material interfaces, we introduce new concept termed effective interface transmission velocity. very striking that many reported interfaces an almost constant velocity over wide range. consideration inspired by reffusivity theory, which analyzing structure-phonon scattering. We expect give intrinsic picture carriers, unaltered influence their capacity carry heat.