Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealing

• DOI: 10.1016/j.apmt.2023.102033
• Publication Date: 2023-12-23T18:39:57Z
• Authors: Alejandro Frechilla; Mari Napari; Nives Strkalj; Eduardo Barriuso; Kham Niang; Markus Hellenbrand; Pavel Strichovanec; Firman Mangasa Si...; Guillermo Antorrena; Andrew Flewitt; César Magén; Germán F. de la F...; Judith L. MacManu...; Luis Alberto Angurel; José Ángel Pardo
• Keywords: Monoclinic crystal system; Piezoresponse force microscopy; Nanosecond

In this work we study the sub-nanosecond laser-induced crystallization of 10 nm-thick atomic layer deposited amorphous Hf0.5Zr0.5O2 (HZO) films in an air atmosphere. We used infrared laser with 1064 nm wavelength and 800 ps pulses to anneal TiN/HZO/TiN capacitors by scanning 80 μm-diameter spot along their top surface a controlled way. The annealing process was optimised terms fluence achieve complete HZO into non-monoclinic polymorph, as demonstrated X-ray diffraction transmission electron microscopy. Piezoresponse force microscopy polarization-field loops confirm that optimal as-annealed are piezoelectric ferroelectric from first cycle on. Spatial selectivity accomplished on selected areas samples. Micro-diffraction experiments show transition between crystallized region is abrupt within distance several hundred µm.