Photoluminescence and Raman scattering of Cu-doped ZnO films prepared by magnetron sputtering

• DOI: 10.1016/j.apsusc.2007.02.013
• Publication Date: 2007-02-27T16:25:57Z
• Authors: X.B. Wang; C. Song; K.W. Geng; F. Zeng; F. Pan
• Keywords: 0103 physical sciences; 02 engineering and technology; 0210 nano-technology; 01 natural sciences

Abstract The Cu-doped ZnO films were prepared by direct current reactive magnetron sputtering using a zinc target with various Cu-chips attached. The influences of Cu-doping on the microstructure, photoluminescence, and Raman scattering of ZnO films were systematically investigated. The results indicate that ZnO films doped with moderate Cu dopant (2.0–4.4 at.%) can obtain wurtzite structure with strong c -axis orientation. The near band edge (NBE) emission of ZnO film can be enhanced by Cu dopant with a concentration of 2.0 at.% and quench quickly with further increase of doping concentration. Two additional modes at about 230 and 575 cm −1 , which could be induced by Cu dopant, can be observed in Raman spectra of the Cu-doped ZnO films.