Bipolar resistive switching in Si/Ag nanostructures

• DOI: 10.1016/j.apsusc.2017.01.140
• Publication Date: 2017-02-04T20:45:43Z
• Authors: C. Dias; H. Lv; R. Picos; P. Aguiar; S. Cardoso; P.P. Freitas; J. Ventura
• Keywords: Electroforming; Reset (finance); Resistive touchscreen; Memristor

Abstract Resistive switching devices are being intensively studied aiming a large number of promising applications such as nonvolatile memories, artificial neural networks and sensors. Here, we show nanoscale bipolar resistive switching in Pt/Si/Ag/TiW structures, with a dielectric barrier thickness of 20 nm. The observed phenomenon is based on the formation/rupture of metallic Ag filaments in the otherwise insulating Si host material. No electroforming process was required to achieve resistive switching. We obtained average values of 0.23 V and −0.24 V for the Set and Reset voltages, respectively. The stability of the switching was observed for over 100 cycles, together with a clear separation of the ON (103 Ω) and OFF (102 Ω) states. Furthermore, the influence of the Set current compliance on the ON resistance, resistances ratio and Set/Reset voltages percentage variation was also studied.