Growth dynamics controllable deposition of homoepitaxial MgO films on the IBAD-MgO substrates

• DOI: 10.1016/j.apsusc.2017.11.091
• Publication Date: 2017-11-13T19:16:05Z
• Authors: Wei Wang; Lin-Fei Liu; Yan-Jie Yao; Sai-Dan Lu; Xiang Wu; Tong Zheng; Shun-Fan Liu; Yi-Jie Li
• Keywords: Deposition; Partial pressure

Abstract Homoepitaxial MgO (Homo-MgO) films, deposited by RF magnetic sputtering method in various experimental conditions, were systematically studied using growth dynamics in older to fully understand their growth mechanism. The results showed that high quality Homo-MgO films could be obtained at high oxygen partial pressure and the thickness of Homo-MgO films were seriously affected by the ratio of O2/Ar. Moreover, an interesting phenomenon we addressed was the growth mode changed with varying the sputtering power, leading to different surface morphology. Most importantly, apart from Homo-MgO films, our theory can also be appropriate for other oxide films grown by RF magnetic sputtering technology.