Energy dependence of morphologies on photoresist surfaces under Ar+ ion bombardment with normal incidence

• DOI: 10.1016/j.apsusc.2020.146510
• Publication Date: 2020-04-28T01:32:48Z
• Authors: Gaoyuan Yang; Dietmar Hirsch; Jinyu Li; Ying Liu; Frank Frost; Yilin Hong
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

Abstract The energy dependence of nanostructures on a photoresist produced by ion bombardment (IB) under normal incidence is studied through atomic force microscopy and time-of-flight secondary ion mass spectroscopy (ToF-SIMS). The energy-dependent morphology evolved from weak islands via nanoholes to a smooth surface on the resist; in particular, nanoholes were produced for a broad energy range of 300–550 eV. The enrichment of light components in the surface layer of the irradiated resist was illustrated owing to the strong decomposition of the photoresist by IB. The energy dependence of the morphologies is explained according to the ToF-SIMS characterization and the existing theoretical models of IB, which is an IB-induced synergy of chemical variation and sputtering. This study extends the IB in inorganic materials into an organic-multicomponent photoresist and provides new insights into the experimental evidence for nanoholes and possible parameters to improve the relevant theoretical model.