The transparent SnO/ZnO quantum dots/SnO2 p-n junction towards the enhancement of photovoltaic conversion

• DOI: 10.1016/j.cej.2019.02.062
• Publication Date: 2019-02-11T02:07:23Z
• Authors: Shi Li; Jiaqi Pan; Hongli Li; Yanyan Liu; Wei Ou; Jingjing Wang; Changsheng Song; Weijie Zhao; Yingying Zheng; Chaorong Li
• Keywords: Photoelectric effect; Quantum yield; Quantum Efficiency

Abstract The SnO/ZnO QDs/SnO2 p-n junction is prepared via a simple route of continuous sputtering process and liquid phase synthesis method. The transparence and photoelectric conversion of these devices are investigated, which exhibits a high transmittance of about ∼80% and an obvious photoelectric conversion enhancement of about ∼100 times than that of the unmodified p-n junction, that could be mainly attributed to the ZnO QDs, including the unique band gap could provide an efficient photon-generated carrier route and high quantum yield could increase the photon-generated electron.