Modulation of the electronic states of 2-D single carrier quantum dots due to presence of hole doped impurity perturbations

• DOI: 10.1016/j.chemphys.2007.11.012
• Publication Date: 2007-11-27T09:13:15Z
• Authors: Ram Kuntal Hazra; Manas Ghosh; S.P. Bhattacharyya
• Keywords: 0103 physical sciences; 01 natural sciences

We report the effects of on- and off-center attractive impurities on regular parabolic dots and their impact on the level structures as a function of the strength of the transverse magnetic field. Information entropy, probability density and level-spacing distribution are used as keys to monitor the pattern of evolution of electronic states. The level structures are marked by crossings and anticrossings and sharply peaked level-spacing distribution functions, either at low or high field strengths confirming the presence of level repulsion. The anticipated emergence of quantum chaos as a result of hole doping is demonstrated in dots with off-centre impurities.