Etching process of silicon oxycarbide from polysiloxane by chlorine

• DOI: 10.1016/j.corsci.2015.02.004
• Publication Date: 2015-02-07T12:17:27Z
• Authors: Duan Liqun; Ma Qingsong; Chen Zhaohui
• Keywords: 01 natural sciences; 0104 chemical sciences

Abstract The etching process of silicon carbide by dry chlorine was investigated as a function of etching temperature using a commercial available polymethyl(phenyl)siloxane resin. Results from etching rate show increasing etching temperature could lead to a change for etching mechanism from diffusion-controlling to interface reaction-controlling. The chlorination of β-SiC in this study should be managed at above 600 °C and can complete at 900 °C for 3 h. A pronounced core–shell structure was observed owing to the partial conversion. Silicon carbide derived carbons (SiC-DCs) are in highly microporosity, with single-modal pore size distributions at around 0.9 nm.