Effect of Sn doping on properties of transparent ZnO thin films prepared by thermal evaporation technique

• DOI: 10.1016/j.cplett.2015.07.009
• Publication Date: 2015-07-14T02:10:13Z
• Authors: N.H. Sheeba; Sunil C. Vattappalam; Johns Naduvath; P.V. Sreenivasan; Sunny Mathew; Rachel Reena Philip
• Keywords: Bath Deposition; Chemical-Vapor-Deposition; Layer; Devices; Electrooptical Properties; Growth; 02 engineering and technology; 0210 nano-technology; 7. Clean energy; Sensor

Abstract Sn doping is used as an effective method to increase conductivity and photosensitivity of highly transparent nanostructured ZnO thin films, prepared by multisource vacuum evaporation followed by air annealing. The microstructural characterizations reveal formation of polycrystalline ZnO and ZnO:Sn films, with grain size ∼16–20 nm and preferred orientation along (0 0 2) plane. Increased electrical conductivity by a factor ∼102 on doping, coupled with the enhancement of transmittance (80–90% in visible range) and photoconductivity lends these wide band gap films (∼3.21 eV–3.24 eV) application in photovoltaics. Fast response to ethanol (5–7 s) indicates suitability of these films in gas sensors.