Electrochemistry of CuO/In2O3 p–n heterojunction nano/microstructure array with sensitivity to H2 at and below room-temperature

• DOI: 10.1016/j.elecom.2013.02.003
• Publication Date: 2013-02-15T15:14:24Z
• Authors: Guangliang Cui; Liang Gao; Binbin Yao; Shuangming Wang; Pinhua Zhang; Mingzhe Zhang
• Keywords: 01 natural sciences; 0104 chemical sciences

Abstract We report a facile template-free procedure to synthesize CuO/In2O3 p–n heterojunction nano/microstructure array on Si substrate. It was synthesized by electrodeposition in quasi-2D ultra-thin liquid layer combining with annealing treatment. By applying a special square potential across the electrodes, Cu 2 + and In 3 + were selectively and periodically deposited according to their reduction potentials. The array is well-ordered with strictly periodic arrangement in hundreds of microns, and it shows a reasonable sensitivity and selectivity to H 2 at and below room temperature due to the tunneling modulation of heterojunction array. And the mechanisms of electrodeposition and tunneling modulation obtained rational explanation.