Formation of electroless barrier and seed layers in a high aspect ratio through-Si vias using Au nanoparticle catalyst for all-wet Cu filling technology

• DOI: 10.1016/j.electacta.2011.02.078
• Publication Date: 2011-04-30T21:34:16Z
• Authors: Fumihiro Inoue; Tomohiro Shimizu; Takumi Yokoyama; Hiroshi Miyake; Kazuo Kondo; Takeyasu Saito; Taro Hayashi; Shukichi Tanaka; Toshifumi Terui; Shoso Shingubara
• Keywords: 0211 other engineering and technologies; 02 engineering and technology

a b s t r a c t An all-wet process was achieved using electroless deposition of barrier and Cu seed layers for fabrication of a high aspect ratio through-Si via (TSV). Formation of a thin barrier metal layer of Ni-B, Co-B and Co-W-B is possible using a Au nanoparticle (AuNP) catalyst, which is densely adsorbed on the SiO2 of the TSV sidewall. A silane coupling agent of 3-aminopropyl-triethoxysilane is effective for enhancement of the density of adsorption for AuNP. A conformal electroless Cu layer is deposited on the barrier layer by displacement plating without a catalyst. The adhesion strength between the electroless barrier layer and the SiO2 substrate is increased by annealing at 300 ◦C. These results strongly suggest that an all-wet process for the formation of Cu-filled TSV with a high aspect ratio is practically possible.