Lattice mismatch alleviation in p-CdTe/n-Si heterostructure by surface engineering on Si substrate

• DOI: 10.1016/j.heliyon.2023.e21536
• Publication Date: 2023-11-01T01:03:04Z
• Authors: Mustapha Isah; Camellia Doroody; Kazi Sajedur Rahman; Muhammad Najib Harif; Tiong Sieh Kiong; Ahmad Wafi Mahmoo...
• Keywords: Cadmium telluride photovoltaics

The study used magnetron sputtering to investigate the growth of cadmium telluride (CdTe) thin films on surface treated n-type silicon (n-Si) substrates. n-Si substrates were textured using potassium hydroxide (KOH) before sputter deposition CdTe. This was followed by chloride treatment reduce strain at interface CdTe and Si, which is caused incompatible lattice thermal expansion mismatch (CTE). X-ray diffraction (XRD) analysis showed that lowest FWHM dislocation densities obtained for CdCl2/CdTe/txt-nSi, aligns with scanning electron microscopy (SEM) results. In SEM images, bonding between Si surfaces visible in cross-sections, top-view images revealed sputtered conforming patterns pyramidal as an engineered capture more light maximize absorption CdTe/Si tandem design. Energy dispersive (EDX) results all deposited exhibited Te atoms than Cd atoms, irrespective CdCl2 treatment. presented suggest texturization improved morphology grain boundary passivation adhesiveness substrate also significantly enhanced. Our findings further demonstrate proper can greatly improve quality grown reducing occurs during process. demonstrates a valuable method enhancing integration two-junction solar cell applications.