Linearity and intermodulation distortion analysis of single and dual metal gate junctionless transistor

• DOI: 10.1016/j.heliyon.2024.e32325
• Publication Date: 2024-06-04T01:19:55Z
• Authors: Bhaskar Awadhiya; Rahul Ratnakumar; Sampath Kumar; Sameer Yadav; Kaushal Nigam; Yashwanth Nanjappa; P.N. Kondekar
• Keywords: Transconductance; Linearity; Distortion (music); Third order

Linearity and intermodulation distortion are very crucial parameters for RFICs design. Therefore, in this work, a detailed comparative analysis on linearity of single metal (SMG) double (DMG) gate junction less transistor (JLT) is done using TCAD silvaco suite. Furthermore, the effects temperature fluctuation, length variation, material engineering performance both devices also studied. A few significant figures merit, including Voltage Intercept Point 2 (VIP2), 3 (VIP3), Third Order Power (IIP3), 1 dB Compression (P1dB), Intermodulation Distortion (IMD3), transconductance derivative First Transconductance (gm1), Second (gm2), (gm3) used to assess device SMG DMG JLT's. The findings show that higher VIP2, VIP3, IIP3, 1-dB compression point lower gm3, IMD3 values obtained JLT when compared its counterpart JLT. JLT, which assures strong low distortion.