Ultra-high Photovoltage (2.45 V) Forming in Graphene Heterojunction via Quasi-Fermi Level Splitting Enhanced Effect

• DOI: 10.1016/j.isci.2020.100818
• Publication Date: 2020-01-07T13:59:10Z
• Authors: Lemin Jia; Wei Zheng; Richeng Lin; Feng Huang
• Keywords: Science; Q; 02 engineering and technology; 0210 nano-technology; 7. Clean energy; Article

Highlights•An open-circuit voltage up to 2.45 V is achieved by the graphene heterojunction device•An efficient band assembly designed induce larger quasi-Fermi level splitting•An EQE as high 56.1% (172 nm) and a rise time short 45 ns are achieved•The adopted effect provides referential way for various photovoltaic devicesSummaryOwing fast response speed low energy consumption, vacuum-ultraviolet (VUV) photodetectors show prominent advantages in field of space science, high-energy physics, electronics industry. For devices, it imperative boost their voltage, which most direct indicator measure photoelectric conversion capability. In this report, splitting enhanced under illumination, benefiting from variable Fermi graphene, proposed significantly increase potential difference between two ends p-Gr/i-AlN/n-SiC device. addition, highest external quantum efficiency (under VUV irradiation 172 at 0 bias ultra-fast photoresponse further demonstrate superiority high-open-circuit-voltage devices. The device design strategy provide construction devices.Graphical abstract