Mechanism insight into double S-scheme heterojunctions and atomic vacancies with tunable band structures for notably enhanced light-driven enrofloxacin decomposition

• DOI: 10.1016/j.jcis.2024.02.106
• Publication Date: 2024-02-14T05:08:03Z
• Authors: Xingyu Zhang; Chenliang Zhou; Shaoyuan Shi; Xuequan Jing; Zhi Zheng; Wenjing Yuan
• Keywords: Photodegradation

Building narrow band gap semiconductors and fast separation of photogenerated electron-hole (e--h+) structures are of great significance for photocatalytic process. In this contribution, the CeO2-x/C3-yN4/Ce(CO3)(OH) double S-scheme heterojunctions with atomic vacancies tunable band gap (2.54 eV) have been designed and fabricated as a boost photocatalyst for enrofloxacin (ENR) photodegradation. Compared with the control samples, the experimental results indicate that the typical sample (CeO2-x/C3-yN4/Ce(CO3)(OH)-2) achieves the highest ENR photodegradation efficiency (93.6 %) in 240 min under a pH of 6, and the possible photodegradation pathways are also proposed. The superior performance is ascribed to the CeO2-x/C3-yN4/Ce(CO3)(OH) double S-scheme heterojunctions for selective recombination of photogenerated electrons with weak-reduction ability in conduction band (CB) of CeO2-x, C3-yN4 and the photogenerated holes with weak-oxidation nature in valance band (VB) of C3-yN4, Ce(CO3)(OH), which increase the retention rate of photogenerated electrons in CB of Ce(CO3)(OH) and photogenerated holes in VB of CeO2-x to degrade ENR. This is the first systematic study of CeO2-x/C3-yN4/Ce(CO3)(OH) double S-scheme heterojunctions for ENR photodegradation.