TL, OSL and ESR studies on beryllium oxide

• DOI: 10.1016/j.jlumin.2010.06.009
• Publication Date: 2010-06-18T04:41:40Z
• Authors: S. Watanabe; T.K. Gundu Rao; P.S. Page; B.C. Bhatt
• Keywords: 02 engineering and technology; 0210 nano-technology

Abstract Electron spin resonance (ESR) studies were carried out to identify the defect centres responsible for the thermoluminescence (TL) and optically stimulated luminescence (OSL) processes in BeO phosphor. Two defect centres were identified in irradiated BeO phosphor by ESR measurements, which were carried out at room temperature and these were assigned to an O− ion and Al2+ centre. The O− ion (hole centre) correlates with the main 190 °C TL peak. The Al2+ centre (electron centre), which acts as a recombination centre, also correlates to the 190 °C TL peak. A third centre, observed during thermal annealing studies, is assigned to an O− ion and is related to the high temperature TL at 317 °C. This centre also appears to be responsible for the observed OSL process in BeO phosphor.