Coupling effect between electromigration and joule heating on the failure of ball grid array in 3D integrated circuit technology

• DOI: 10.1016/j.jmrt.2023.12.187
• Publication Date: 2023-12-24T00:53:09Z
• Authors: Yifan Yao; Yuxuan An; K.N. Tu; Yingxia Liu
• Keywords: Electromigration; Ball grid array; Current crowding; Microelectronics

Ball Grid Array (BGA) packaging method has been widely used in microelectronic devices, and electromigration (EM) BGA is a crucial reliability issue, determining the performance of products. Herein, we report new failure mode induced by coupling effect EM Joule heating structure. The test sample consists roll 500 μm-BGA solder joints with upper lower Cu under-bump-metallization (UBM) different thicknesses, 16 μm, 68 respectively. Open failures thinner cathodic UBM at contacting area joint were observed under four conditions (130 °C-3000 A/cm2, 160 °C-2300 °C-4600 A/cm2). Infrared (IR) results reveal temperature higher than that as well thicker UBM. Simulation elucidate current density about 22 times average joint, so crowding can be very serious site. Furthermore, severe promote nucleation rate voids location, which further increase temperature, leading to positive feedback until an open occurs circuitry. Our analysis enables discussion BGA, provides valuable guide device design against consumer electronic