Spectroscopic Understanding of Structural and Electrical Property Variations in Dopant-Free ZnO Films

• DOI: 10.1016/j.jmst.2016.10.009
• Publication Date: 2016-11-03T16:32:26Z
• Authors: Hyegyeong Kim; Ji Woong Kim; Dooyong Lee; Won-Jae Lee; Jong-Seong Bae; Jaekwang Lee; Sungkyun Park
• Keywords: Physical property

Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments (O 2 , in-Air, N 2 and vacuum) resulted in better crystallinity than in the as-grown film. In particular, the film annealed under the N 2 environment showed better crystallinity and electrical properties than films annealed in other environments. Based on spectroscopic analysis, we found a correlation between physical (structural, electrical) and chemical properties: The crystallinity of ZnO films is closely related to Zn O bonding, whereas carrier concentration is associated with V O (oxygen vacancy).