Fatigue-less relaxor ferroelectric thin films with high energy storage density via defect engineer

• DOI: 10.1016/j.jmst.2020.10.053
• Publication Date: 2020-11-22T06:24:48Z
• Authors: Baijie Song; Shuanghao Wu; Hao Yan; Kun Zhu; Liuxue Xu; Bo Shen; Jiwei Zhai
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

Abstract Thin film capacitors with excellent energy storage performances, thermal stability and fatigue endurance are strongly desired in modern electrical and electronic industry. Herein, we design and prepare lead-free 0.7Sr0.7Bi0.2TiO3-0.3BiFeO3- x%Mn (x = 0, 0.5, 1.5, 2, 3) thin films via sol-gel method. Mn ions of divalent valence combine with oxygen vacancies, forming defect complex, which results in marked decline in leakage current and obvious enhancement in breakdown strength. A high energy storage density ∼ 47.6 J cm−3 and good efficiency ∼ 65.68 % are simultaneously achieved in 2% Mn doped 0.7Sr0.7Bi0.2TiO3-0.3BiFeO3 thin film capacitor. Moreover, the 2% Mn-doped thin film exhibits excellent thermal stability in wide operating temperature range (35–115 °C) and strong fatigue endurance behaviors after 108 cycles. The above results demonstrate that 2% Mn-doped 0.7Sr0.7Bi0.2TiO3-0.3BiFeO3 thin film capacitor with superior energy storage performances is a potential candidate for electrostatic energy storage.