High-performance self-powered ultraviolet photodetector in SnO2 microwire/p-GaN heterojunction using graphene as charge collection medium

• DOI: 10.1016/j.jmst.2022.07.050
• Publication Date: 2022-09-22T05:24:03Z
• Authors: Tong Xu; Mingming Jiang; Peng Wan; Yang Liu; Caixia Kan; Daning Shi
• Keywords: Ultraviolet; Charge carrier; Quantum Efficiency; Specific detectivity

Graphene monolayer has been extensively applied as a transparency electrode material in photoelectronic devices due to its high transmittance, carrier mobility, and ultrafast dynamics. In this study, high-performance self-powered photodetector, which is made of SnO2 microwire, p-type GaN film, graphene transparent electrode, was proposed fabricated. The detector sensitive ultraviolet light signals illustrates pronounced detection performances, including peak responsivity ∼ 223.7 mA W–1, detectivity 6.9 × 1012 Jones, fast response speed (rising/decaying times 18/580 µs), excellent external quantum efficiency 77% at 360 nm illumination without power supply. Compared with the pristine SnO2/GaN photodetector using ITO device performances are significantly increased over 6 103% 3 103%, respectively. performance-enhanced characteristics mainly attributed high-quality heterointerface n-SnO2/p-GaN, highly conductive capacity, unique electrodes. Particularly, built-in potential formed heterojunction interface could be strengthened by Schottky barrier derived from wire, enhancing collection through charge medium. This work great importance significance developing excellent-performance photodetectors for photovoltaic optoelectronic applications operation manner.