High performance broadband self-driven photodetector based on MXene (Ti3C2Tx)/GaAs Schottky junction

• DOI: 10.1016/j.matdes.2021.109850
• Publication Date: 2021-05-25T06:29:00Z
• Authors: Xiwei Zhang; Jiahua Shao; Chenxi Yan; Xinmiao Wang; Yufei Wang; Zhihui Lu; Ruijie Qin; Xiaowen Huang; Junlong Tian; Longhui Zeng
• Keywords: Photodetection; MXenes; Specific detectivity

As a novel family of 2D materials, MXenes are supposed to play vital role in optoelectronic devices and systems due their high conductivity, good optical properties, favorable compatibility with water organic solvents. However, the application highly sensitive photodetection is far scarcely investigated. Here, we demonstrate high-quality Ti3C2Tx/GaAs Schottky junction by simply dripping Ti3C2Tx MXene solution on pre-patterned GaAs substrate. Owing wide absorption quality junction, self-driven photodetector an impressive performance realized. The assembled exhibits sensitivity over waveband responsivity ~1.46 A/W, large specific detectivity ~1.23 × 1013 Jones, Ilight/Idark ratio 5.6 105. Significantly, capable sensing infrared light signal up 980 nm which exceeds edge (874 nm) generation hot electrons film. Given superior device along simple facile fabrication method, may find great potential broadband, applications.