2D semimetal with ultrahigh work function for sub-0.1 V threshold voltage operation of metal-semiconductor field-effect transistors

• DOI: 10.1016/j.matdes.2023.112035
• Publication Date: 2023-06-01T08:59:06Z
• Authors: Tianjiao Zhang; Jialei Miao; Chun Huang; Zheng Bian; Maoxin Tian; Haohan Chen; Ruihuan Duan; Lin Wang; Zheng Liu; Jingsi Qiao; Yang Xu; Bin Yu; Yuda Zhao
• Keywords: MESFET

Metal-semiconductor field-effect transistors (MESFETs) offer the advantages of efficient gate control and low power consumption due to large junction capacitance. However, strong Fermi-level pinning caused by metal-induced gap states makes it a great challenge build high-quality Schottky with energy barrier leakage current. Moreover, upper limit work function conventional metals is around 5 eV, which prevents formation wide depletion region reduction consumption. In this work, 2D semimetals high have been used as fabricate van der Waals MESFETs. Compared PtSe2 PdSe2, TiS2 ultrahigh 6.6 eV forms largest height MoS2. And TiS2/MoS2 MESFETs display sub-0.1 V threshold voltage owing built-in potential exhibit small subthreshold swing 73 mV/dec. The tuning channel carrier density from back can further optimize device performance provide strategy AND logic in dual-gated transistor. Our successfully demonstrates use high-work-function semimetal realize high-performance MESFET