Enhanced dielectric properties in (In, Nb) co-doped BaTiO 3 ceramics

• DOI: 10.1016/j.matlet.2017.04.044
• Publication Date: 2017-04-11T12:16:48Z
• Authors: J. Sun; S.T. Wang; L. Tong; Q.J. Li; Y. Yu; Y.D. Li; S.G. Huang; Y.M. Guo; C.C. Wang
• Keywords: High-κ dielectric

Abstract BaTi1-x(In0.5Nb0.5)xO3 (x = 0, 0.01, and 0.03) ceramic samples were prepared using the conventional solid-state reaction method. The dielectric properties of these samples were investigated as a function of temperature (300 K ≤ T ≤ 700 K) and frequency (102 Hz ≤ f ≤ 106 Hz). Great enhancement of dielectric constant in the dual doped samples was found. Defect diploles of [Nb Ti 5 + - Ti 3 + ] and [Nb Ti 5 + - In Ti 3 + ] were suggest to account for the enhancement of dielectric constant.