Improvement of N-ZnO chemiresistive gas sensor toward lower detection limit of acetone and ethanol at low operating temperature
02 engineering and technology
0210 nano-technology
DOI:
10.1016/j.matlet.2021.130562
Publication Date:
2021-07-29T16:13:45Z
AUTHORS (4)
ABSTRACT
Abstract Nitrogen doped ZnO (N-ZnO) chemiresistive gas sensor was fabricated to improve lower limit of detection (LLOD). N-ZnO was fabricated by mixing ZnO with urea using ball milling method followed by annealing. Both pure ZnO and N-ZnO possess porous morphology. N-ZnO sensor showed a more improved LLOD (20 ppm) toward acetone and ethanol compared to the pure ZnO (LLOD = 1000 ppm) at 150 °C which is the lower limit of working temperature for both of the samples. A new understanding on interchangeable n-type and p-type behaviour of N-ZnO upon exposure to different acetone concentrations was also discussed in this paper.
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