One-dimensional thin-film phonon transport with generation

• DOI: 10.1016/j.mejo.2007.10.007
• Publication Date: 2007-12-05T23:31:01Z
• Authors: A. Bulusu; D.G. Walker
• Keywords: Heat Generation

The Boltzmann transport equation is often used for non-continuum when the mean free path of phonons order device sizes. One particular application involves heat generation in electronic devices. In a highly scaled MOSFET, example, majority produced localized region immediately below gate on drain side. size this smaller than phonons, which suggests Knudsen number large and models are appropriate. Using one-dimensional BTE diffusion equation, comparison between continuum made. focus comparative study behavior each model various numbers region. Results suggest that distributions similar to except at boundaries where jump condition results deviations from distributions. Furthermore, peak energy predicted using noncontinuum formulation always less regardless number, contrast other prevailing studies.