A 1-V feed-forward incremental modulator simulation based on gain-boost inverter for image sensors in 65-nm CMOS

• DOI: 10.1016/j.mejo.2015.09.020
• Publication Date: 2015-10-26T06:05:49Z
• Authors: Jiangtao Xu; Zhaoyang Yin; Peng Wang; Liqiang Han; Tao Lv
• Keywords: 0202 electrical engineering, electronic engineering, information engineering; 02 engineering and technology

This paper presents the analysis and implementation of a low-voltage and low-power incremental feed-forward modulator for CMOS image sensors, which is realized in the standard 65nm CMOS technology. A feed-forward architecture and an integrator based on class-C inverter are employed in this modulator. Aiming to increase the signal-to-noise ratio (SNR) of the image sensors, the gain-boost technology is applied to this modulator. In order to optimize the integrator based on class-C inverter and satisfy a requirement for conversion speed of the modulator, the accurate mathematical expression of a charge transfer process of integrator based on class-C inverter is established. This incremental modulator operates in 1-V supply voltage, and achieves 80.4dB SNR at 50kS/s conversion rate with a 10MHz sampling frequency. The offset error is 0.2mV and the maximum integral nonlinearity (INL) is 0.97 LSB. In addition, its power consumption is 25-µW, which is particularly suitable for low-voltage high-resolution sensors applications.