Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature

• DOI: 10.1016/j.microrel.2010.07.059
• Publication Date: 2010-08-05T08:36:52Z
• Authors: M. Tounsi; A. Oukaour; B. Tala-Ighil; H. Gualous; B. Boudart; D. Aissani
• Keywords: Power cycling; Insulated-gate bipolar transistor; Temperature cycling; High Voltage; Power module

The success of the high temperature power electronic applications depends on the power device reliability. The increasing thermal demands, like in hybrid electric cars, require power devices operating at junction temperatures above their common level of 125 °C. The thermal cycles generated in standard modules in such conditions induce several failure mechanisms in their package and chips. This article presents ageing tests of an EconoPIM IGBT module submitted to PWM power cycling at high ambient temperature. Several electrical and thermal parameters are monitored to detect failure onsets in the module components. Static and dynamic measurements are periodically made to reveal possible module characteristic drifts, and to better understand the effects of this kind of cycling test on the module static and switching behaviors. The follow-up of the dynamic parameter evolution represents the originality of this study.