Radiation hardened by design techniques to reduce single event transient pulse width based on the physical mechanism

• DOI: 10.1016/j.microrel.2011.12.002
• Publication Date: 2012-01-02T09:22:57Z
• Authors: Jianjun Chen; Shuming Chen; Bin Liang; Biwei Liu; Fanyu Liu
• Keywords: Transient (computer programming)

Abstract The impact of the source on single event transient (SET) is studied for the balanced two-transistor inverter by a novel simulation structure in a 90 nm twin-well bulk CMOS technology. Due to the significantly distinct mechanism of single event change collection in PMOS and NMOS, the source, which is beneficial to broadening P-hit SET pulse width ( W SET ) but reducing N-hit W SET , plays a different role in SET production. Based on these different source roles, different radiation hardened by design (RHBD) methods are proposed to reduce W SET for PMOS and NMOS, respectively. The simulation results show that the proposed RHBD methods can remarkably reduce W SET .