Window for better reliability of nitride heterostructure field effect transistors

• DOI: 10.1016/j.microrel.2012.06.071
• Publication Date: 2012-07-09T05:12:49Z
• Authors: A. Matulionis; J. Liberis; E. Šermukšnis; L. Ardaravičius; A. Šimukovič; C. Kayis; C.Y. Zhu; R. Ferreyra; V. Avrutin; Ü. Özgür; H. Morkoç
• Keywords: 0103 physical sciences; 01 natural sciences

Abstract Phase-noise technique was applied to monitor channel degradation of nitride heterostructure field effect transistors (HFETs) subjected to a fixed drain voltage stress at different fixed gate voltages. The slowest degradation and the lowest noise were found for the electron-density window centered at ∼1 × 10 13 cm −2 where ultrafast decay of hot phonons took place. A possibility to shift the window towards higher sheet densities was demonstrated experimentally and accounted by plasmon-assisted dissipation of Joule heat.