Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET

• DOI: 10.1016/j.microrel.2013.07.022
• Publication Date: 2013-10-12T21:17:59Z
• Authors: A. Michez; J. Boch; S. Dhombres; F. Saigné; A.D. Touboul; J.-R. Vaillé; L. Dusseau; E. Lorfèvre; R. Ecoffet
• Keywords: Power Electronics; Power MOSFET

Abstract A new TCAD modeling tool taking into account dose effects is presented: E.CO.R.C.E. It allows a study of dose and temperature dependence on a power MOSFET. Modeling results are compared to experimental data. It is shown that threshold voltage shift at room temperature can be modeled with a good accuracy using only one hole trap level. However, temperature effect on threshold voltage shift cannot be fitted with less than four hole traps levels. More generally, this tool allows a better understanding of mechanisms involved during irradiation.