Study on the effect of melt flow behavior on the uniformity of phosphorus doping during the growth of large-size n-type monocrystalline silicon by Czochralski method

• DOI: 10.1016/j.mssp.2024.108261
• Publication Date: 2024-02-27T10:54:30Z
• Authors: Zhenling Huang; Liang Zhao; Tai Li; Jiaming Kang; Xiang Zhou; Shaoyuan Li; Wenhui Ma; Guoqiang Lv; Yongsheng Ren
• Keywords: Crucible (geodemography); Crystal (programming language); Melt flow index; Micro-pulling-down