2D ferroelectric materials: Emerging paradigms for next-generation ferroelectronics

• DOI: 10.1016/j.mtelec.2023.100080
• Publication Date: 2023-11-22T13:17:10Z
• Authors: Weijun Wang; You Meng; Wei Wang; Yuxuan Zhang; Bowen Li; Yan Yan; Boxiang Gao; Johnny C. Ho
• Keywords: Nanoelectronics; Non-Volatile Memory; Memristor

Ferroelectric materials with electrically switchable spontaneous polarization are technologically important for developing next-generation low-power nanoelectronics and ferroelectronics. Regardless of significant challenges rich functionalities owing to the insulating nature conventional thin-film ferroelectrics, ferroelectricity instability or disappearance below a critical thickness limit generally exists. Therefore, exploring emerging two-dimensional (2D) ferroelectric nanoscale dimensions moderate bandgaps is crucial high-integration functional nanoelectronics. This review offers comprehensive analysis historical background progression in both ferroelectrics novel 2D ferroelectrics. Special attention given device applications based on which switching process occurs within channel material itself. Leveraging rationally designed configurations intriguing working mechanism have been rapidly developed various application scenarios, such as gate-tunable memristor, non-volatile memory, biological synapse, in-memory computing, etc. also sheds light potential opportunities future advancement integrating into devices commercial electronic circuits.